1 UB3006 n-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage 30 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 90 a i d @t c =100 continuous drain current, v gs @ 10v 1 58 a i d @t a =25 continuous drain current, v gs @ 10v 1 15 a i d @t a =70 continuous drain current, v gs @ 10v 1 12 a i dm pulsed drain current 2 180 a eas single pulse avalanche energy 3 252 mj i as avalanche current 48 a p d @t c =25 total power dissipation 4 74 w p d @t a =25 total power dissipation 4 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient (steady state) 1 --- 62 /w r jc thermal resistance junction-case 1 --- 1.68 /w id 30v 6m ? 90a the UB3006 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UB3006 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to263 pin configuration product summery bv dss r ds(on)
2 n-ch 30v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.028 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =30a --- 4.5 6 m v gs =4.5v , i d =15a --- 7.5 9 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -6.16 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =30a --- 43 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.6 3.2 q g total gate charge (4.5v) v ds =15v , v gs =4.5v , i d =15a --- 20 28.0 nc q gs gate-source charge --- 7.6 10.6 q gd gate-drain charge --- 7.2 10.1 t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 i d =15a --- 7.8 15.6 ns t r rise time --- 15 27 t d(off) turn-off delay time --- 37.3 75 t f fall time --- 10.6 21.2 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 2295 3213 pf c oss output capacitance --- 267 374 c rss reverse transfer capacitance --- 210 294 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =24a 63 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 90 a i sm pulsed source current 2,6 --- --- 180 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v t rr reverse recovery time i f =30a , di/dt=100a/s , t j =25 --- 14 --- ns q rr reverse recovery charge --- 5 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =48a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UB3006
3 n-ch 30v fast switching mosfets 0 30 60 90 120 150 180 00.511.522.53 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 3 6 9 12 0 0.3 0.6 0.9 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 t j =150 0 2 4 6 8 10 0 6 12 18 24 30 36 42 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =24v v ds =15v 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UB3006
4 n-ch 30v fast switching mosfets 10 100 1000 10000 1 5 9 13172125 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0 1 10 100 1000 0.1 1 10 100 v ds (v) i d (a) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) 0.02 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.01 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UB3006
|
